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We examined the neural correlates underlying the semantic processing of native- and nonnative-accented sentences, presented in quiet or embedded in multi-talker noise. Implementing a semantic violation paradigm, 36 English monolingual young adults listened to American-accented (native) and Chinese-accented (nonnative) English sentences with or without semantic anomalies, presented in quiet or embedded in multi-talker noise, while EEG was recorded. After hearing each sentence, participants verbally repeated the sentence, which was coded and scored as an offline comprehension accuracy measure. In line with earlier behavioral studies, the negative impact of background noise on sentence repetition accuracy was higher for nonnative-accented than for native-accented sentences. At the neural level, the N400 effect for semantic anomaly was larger for nativeaccented than for nonnative-accented sentences, and was also larger for sentences presented in quiet than in noise, indicating impaired lexical-semantic access when listening to nonnative-accented speech or sentences embedded in noise. No semantic N400 effect was observed for nonnative-accented sentences presented in noise. Furthermore, the frequency of neural oscillations in the alpha frequency band (an index of online cognitive listening effort) was higher when listening to sentences in noise versus in quiet, but no difference was observed across the accent conditions. Semantic anomalies presented in background noise also elicited higher theta activity, whereas processing nonnative-accented anomalies was associated with decreased theta activity. Taken together, we found that listening to nonnative accents or background noise is associated with processing challenges during online semantic access, leading to decreased comprehension accuracy. However, the underlying cognitive mechanism (e.g., associated listening efforts) might manifest differently across accented speech processing and speech in noise processing. 

Abstract Synaptic devices with tunable weight hold great promise in enabling non-von Neumann architecture for energy efficient computing. However, conventional metal-insulator-metal based two-terminal memristors share the same physical channel for both programming and reading, therefore the programming power consumption is dependent on the synaptic resistance states and can be particularly high when the memristor is in the low resistance states. Three terminal synaptic transistors, on the other hand, allow synchronous programming and reading and have been shown to possess excellent reliability. Here we present a binary oxide based three-terminal MoS₂synaptic device, in which the channel conductance can be modulated by interfacial charges generated at the oxide interface driven by Maxwell-Wagner instability. The binary oxide stack serves both as an interfacial charge host and gate dielectrics. Both excitatory and inhibitory behaviors are experimentally realized, and the presynaptic potential polarity can be effectively controlled by engineering the oxide stacking sequence, which is a unique feature compared with existing charge-trap based synaptic devices and provides a new tuning knob for controlling synaptic device characteristics. By adopting a three-terminal transistor structure, the programming channel and reading channel are physically separated and the programming power consumption can be kept constantly low (∼50 pW) across a wide dynamic range of 10⁵. This work demonstrates a complementary metal oxide semiconductor compatible approach to build power efficient synaptic devices for artificial intelligence applications.